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june 2016 docid023753 rev 5 1 / 17 this is information on a product in full produ ction. www.st.com STGW40H120DF2, stgwa40h120df2 trench gate field - stop igbt, h series 1200 v, 40 a high speed datasheet - production data figure 1 : internal schematic diagram features ? maximum junction temperature: t j = 175 c ? high speed switching series ? minimized tail current ? v ce(sat) = 2.1 v (typ.) @ i c = 40 a ? 5 s minimum short circuit withstand time at t j =150 c ? safe paralleling ? very fast recovery antiparallel dio de ? low thermal resistance applications ? uninterruptible power supply ? welding machines ? photovoltaic inverters ? power factor correction ? high frequency converters description these devices are igbts developed using an advanced proprietary trench gate field - stop structure. these devices are part of the h series of igbts, which represents an opti mum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. furthermore, a slightly positive v ce(sat) temperature coefficient and very tight parameter distribution result in safer paralleling op eration. table 1: device summary order code marking package packaging STGW40H120DF2 g40h120df2 to - 247 tube stgwa40h120df2 g40h120df2 to - 247 long leads tube
contents STGW40H120DF2, stgwa40h120df2 2 / 17 docid023753 rev 5 cont ents 1 electrical ratings ................................ ................................ ............. 3 2 electrical characteristics ................................ ................................ 4 2.1 electrical characteristics (curves) ................................ ...................... 6 3 test circuits ................................ ................................ ................... 11 4 package information ................................ ................................ ..... 12 4.1 to - 247 package information ................................ ........................... 12 4.2 to - 247 long leads package information ................................ ......... 14 5 revision history ................................ ................................ ............ 16
STGW40H120DF2, stgwa40h120df2 electrical ratings docid023753 rev 5 3 / 17 1 electrical ratings table 2: absolute maximum ratings symbol parameter value unit v ces collector - emitter voltage (v ge = 0) 1200 v i c co ntinuous collector current at t c = 25 c 80 a i c continuous collector current at t c = 100 c 40 a i cp (1) pulsed collector current 160 a v ge gate - emitter voltage 20 v v ge transient gate - emitter voltage (t p 10 s, d 0.01) 30 v i f continuous forward current at t c = 25 c 80 a i f continuous forward current at t c = 100 c 40 a i fp (1) pulsed forward current 160 a p tot total dissipation at t c = 25 c 468 w t stg storage temperature range - 55 to 150 c t j operating junction temperature range - 55 to 175 c notes: (1) pulse width limited by maximum junction temperature. table 3: thermal data symbol parameter value unit r thjc thermal resistance junction - case igbt 0.32 c/w r thjc th ermal resistance junction - case diode 1.3 c/w r thja thermal resistance junction - ambient 50 c/w
electrica l characteristics STGW40H120DF2, stgwa40h120df2 4 / 17 docid023753 rev 5 2 electrical characteristics t c = 25 c unless otherwise spec ified table 4: static characteristics symbol parameter test conditions min. typ. max. unit v (br)ces collector - emitter breakdown voltage v ge = 0 v, i c = 2 ma 1200 v v ce(sat) collector - emitter saturation voltage v ge = 15 v, i c = 40 a 2.1 2.6 v v ge = 15 v, i c = 40 a, t j = 125 c 2.4 v ge = 15 v, i c = 40 a, t j = 175 c 2.5 v f forward on - voltage i f = 40 a 3.9 4.9 v i f = 40 a, t j = 125 c 3.05 i f = 40 a, t j = 175 c 2.8 v ge(th) gate threshold voltage v ce = v ge , i c = 2 ma 5 6 7 v i c es collector cut - off current v ge = 0 v, v ce = 1200 v 25 a i ges gate - emitter leakage current v ce = 0 v, v ge = 20 v 250 na table 5: dynamic characteristics symbol parameter test conditions min. typ. max. unit c ies input capacitance v ce = 25 v, f = 1 mhz, v ge = 0 v - 3200 - pf c oes output capacitance - 220 - c res reverse transfer capacitance - 80 - q g total gate charge v cc = 960 v, i c = 40 a, v ge = 15 v (see figure 30: " gate charge test circuit" ) - 158 - nc q ge gate - emitter charge - 17 - q gc gate - collector charge - 85 -
STGW40H120DF2, stgwa40h120df2 electrical characteristics docid023753 rev 5 5 / 17 table 6: igbt switching characteristics (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) turn - on delay time v ce = 600 v, i c = 40 a, v ge = 15 v, r g = 10 (see figure 31: " switching waveform" ) 18 - ns t r current rise time 37 - ns (di/dt) on turn - on current slope 1755 - a/s t d(off) turn - off - delay time 152 - ns t f current fall time 83 - ns e on (1) turn - on switching energy 1 - mj e off (2) turn - off switching energy 1.32 - mj e ts total switching energy 2.32 - mj t d(on) turn - on delay time v ce = 600 v, i c = 40 a, v ge = 15 v, r g = 10 t j = 175 c (see figure 31: " switching waveform" ) 36 - ns t r current rise time 20 - ns (di/dt) on turn - on current slope 1580 - a/s t d(off) turn - off - delay time 161 - ns t f current fall time 190 - ns e on (1) turn - on switching energy 1.81 - mj e off (2) turn - off switching energy 2.46 - mj e ts total switching energy 4.27 - mj t sc short - circuit withstand time v cc = 600 v, v ge = 15 v, t jstart = 150 c 5 - s notes: (1) including the reverse recovery of the diode. (2) including the tail of the collector current. table 7: diode switching characteristics (inductive load) symbol parameter test conditions min. typ. max. unit t rr reverse recovery time i f = 40 a, v r = 600 v, v ge = 15 v (see figure 31: " switching waveform" ) di/dt = 500 a/s - 488 ns q rr reverse recovery charge - 2.59 c i rrm reverse recovery current - 11.6 a di rr /dt peak rate of fall of reverse r ecovery current during t b - 406 a/s e rr reverse recovery energy - 0.38 mj t rr reverse recovery time i f = 40 a, v r = 600 v, v ge = 15 v t j = 175 c (see figure 31: " switching waveform" ) di/dt = 500 a/s - 484 ns q r r reverse recovery charge - 4.5 c i rrm reverse recovery current - 18.6 a di rr /dt peak rate of fall of reverse recovery current during t b - 170 a/s e rr reverse recovery energy - 0.94 mj
electrical characteristics STGW40H120DF2, stgwa40h120df2 6 / 17 docid023753 rev 5 2.2 electrical characteristics (curves) figure 2 : power dissipation vs. case temperature figure 3 : collector current vs. case temperature figure 4 : output characteristics (t j = 25 c) figure 5 : output characteristics (t j = 175 c) figure 6 : v ce(sat) vs. junction temperature figure 7 : v ce(sat) vs. colle ctor current v ce(sat) 3.4 2.6 1.8 0 i c (a) (v) 4.2 30 5.0 1.0 v ge = 15v t j = - 40c t j = 25c t j = 175c 60 90 120 150 gipg190320151413 r v i c 20 0 0 1 v ce (v) (a) 4 40 2 3 v ge =15v 60 9v 1 1v 7v 13v 5 80 100 120 140 gipg13032014 1 127fsr v ce(sat) 3.0 2.6 2.2 1.8 -50 t j (c) (v) 100 3.4 0 50 150 v ge = 15v i c = 80 a i c = 40 a i c = 20 a 1.4 gipg13032014 1 146fsr i c 20 10 0 0 t c (c) (a) 100 30 50 v ge 15 v , t j 175 c 150 50 40 60 70 80 gipg13032014 1 109fsr p tot 150 100 50 0 0 25 t c (c) (w) 100 200 50 75 250 175 125 150 300 350 400 450 v g e 15 v , t j c 175 gipg130320141053fsr i c 20 0 0 1 v ce (v) (a) 4 40 2 3 v ge =15v 60 9v 1 1v 7v 13v 5 80 100 120 140 gipg13032014 11 14fsr
STGW40H120DF2, stgwa40h120df2 electrical characteristics docid023753 rev 5 7 / 17 figure 8 : collector current vs. switching frequency figure 9 : forward bias safe operating area figure 10 : transfer characteristics figure 11 : diode v f vs. forward current figure 12 : normalized v ge(th) vs. junction temperature figure 13 : normalized v (br)ces vs. junction temperature v ge(th) 1.1 1.0 0.6 -50 t j (c) (norm) 0 50 100 150 i c = 2m a v ce = v ge 0.7 0.8 0.9 gipg130320141400fsr v (br)ces 0.98 0.94 0.9 -50 t j (c) (norm) 0 50 100 150 i c = 2m a 1.06 1.02 gipg130320141405fsr t j =175c t j =25c 7 v ge (v) 1 1 9 i c 60 40 20 0 5 (a) 80 100 120 140 v ce =10v gipg130320141348fsr i c 10 1 0.1 1 v ce (v) (a) 10 10 s 100 s 1 ms single pulse t c= 25c, t j <= 175c v ge = 15v 100 100 1000 1 s gipg130320141339fsr 0 20 40 60 80 1 10 i c [ a ] f [ k h z] g ? re c t a n g ula r cu rre n t s hap e, ( du t y c y cl e= 0 . 5 , v cc = 6 00 v, r =10 , v g e = 0 / 15 v , t j = 17 5 c) tc= 8 0 c tc= 10 0 c 100 120 gipg130320141328fsr
electrica l characteristics STGW40H120DF2, stgwa40h120df2 8 / 17 docid023753 rev 5 figure 14 : capacita nce variations figure 15 : gate charge vs. gate - emitter voltage figure 16 : switching energy vs. collector current figure 17 : switching energy vs. gate resistance figure 18 : switching energy vs. temperature figure 19 : switching energy vs. collector emitter voltage e 0 i c (a) (j) 0 20 40 1000 60 80 2000 e on 3000 v cc = 600 v , v ge = 15 v , r g = 10, t j = 175c e off 4000 5000 gipg130320141432fsr v cc i c 40 a i g 1m a 6 3 0 0 q g (nc) 30 60 90 15 9 v ge (v) 120 150 12 gipg200320151700 r v e 0 r g () (j) 0 10 20 500 1000 1500 30 40 2000 e off v cc = 600 v , v ge = 15 v , i c = 40 a, t j = 175 c e on 2500 3000 3500 4000 gipg130320141439fsr c ies f=1 mhz,v ge =0v c oes c res c 10 v ce (v) (pf) 0.1 1 10 100 1000 100 gipg190320151507 r v e 900 t j (c) (j) 0 50 1 100 1300 1500 100 150 e off v cc = 600 v , v ge = 15 v , r g = 10, i c = 40 a e on 1700 1900 2100 2300 2500 gipg130320141450fsr e 200 v ce (v) (j) 200 600 800 1400 2000 e off t j = 175c, v ge = 15 v , r g = 10, i c = 40 a 2600 3200 e on 400 800 gipg130320141459fsr
STGW40H120DF2, stgwa40h120df2 electrical characteristics docid023753 rev 5 9 / 17 figure 20 : short - circuit time and current vs. v ge figure 21 : switching times vs. collector current figure 22 : switching times vs. gate resistance figure 23 : reverse recovery current vs. diode current slope figure 24 : reverse recovery time vs. diode current slope figure 25 : reverse recovery charge vs. diode current slope r g () 0 10 20 30 t f t j = 175c, v ge = 15 v , i c = 40a, v cc = 600v 40 t do f f t r t don t (ns) 10 100 1 gipg140320141205fsr i rm 0 di/dt(a/s) (a) 0 400 800 10 1200 i f = 40a, v cc = 600 v , v ge = 15v 1600 15 =175c 20 5 t j 25 30 gipg140320141215fsr 3 0 ( s ) t sc i sc v c c 60 0 v t j 150 c ( a) 14 10 10 v ge (v) 1 1 12 13 26 t sc 14 18 22 80 320 200 260 140 i sc gipg190320151623 r v t i c (a) (ns) 0 20 40 10 60 t f t j = 175c, v ge = 15 v , r g = 10, v cc = 600v t do f f 100 80 t don t r 1 gipg14032014 1 159fsr t rr 0 di/dt(a/s) (ns) 0 400 800 400 1200 i f = 40a, v cc = 600 v , v ge = 15v 1600 600 =175c 800 200 t j 1000 1200 1400 gipg140320141222fsr q rr 3000 di/dt(a/s) (nc) 0 400 800 4500 1200 i f = 40a, v cc = 600 v , v ge = 15v 1600 5000 =175c 4000 t j 3500 5500 6000 gipg140320141238fsr
electrical characteristics STGW40H120DF2, stgwa40h120df2 10 / 17 docid023753 rev 5 figure 26 : reverse recovery energy vs. diode current slope figure 27 : ther mal impedance for igbt figure 28 : thermal impedance for diode e rr 400 di/dt(a/s) (j) 0 400 800 1000 1200 i f = 40a, v cc = 600 v , v ge = 15v 1600 1400 =175c 600 t j 800 1200 gipg140320141247fsr
STGW40H120DF2, stgwa40h120df2 test circuits docid023753 rev 5 11 / 17 3 test circuits figure 29 : test circuit for ind uctive load switching figure 30 : gate charge test circuit figure 31 : switching waveform figure 32 : diode reverse recovery waveform a a c e g b r g + - g c 3 . 3 f 1 0 0 0 f l = 1 00 h v cc e d . u . t b a m 0 15 0 4 v 1 am01505v1 v i v gmax p w i g =cons t v cc 12 v 47 k 1 k 100 2.7 k 47 k 1 k 2200 f d.u. t . 100 nf v g
package information STGW40H120DF2, stgwa40h120df2 12 / 17 docid023753 rev 5 4 package information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. 4.1 to - 247 package information figure 33 : to - 247 package outline
STGW40H120DF2, stgwa40h120df2 package information docid023753 rev 5 13 / 17 tab le 8: to - 247 package mechanical data dim. mm min. typ. max. a 4.85 5.15 a1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ?p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
package information STGW40H120DF2, stgwa40h120df2 14 / 17 docid023753 rev 5 4.2 to - 247 long leads package information figure 34 : to - 247 long lead package outline
STGW40H120DF2, stgwa40h120df2 package information docid023753 rev 5 15 / 17 table 9: to - 247 long lead package me chanical data dim. mm min. typ. max. a 4.90 5.00 5.10 a1 2.31 2.41 2.51 a2 1.90 2.00 2.10 b 1.16 1.26 b2 3.25 b3 2.25 c 0.59 0.66 d 20.90 21.00 21.10 e 15.70 15.80 15.90 e2 4.90 5.00 5.10 e3 2.40 2.50 2.60 e 5.34 5.44 5.54 l 19.80 19.9 2 20.10 l1 4.30 p 3.50 3.60 3.70 q 5.60 6.00 s 6.05 6.15 6.25
revision history STGW40H120DF2, stgwa40h120df2 16 / 17 docid023753 rev 5 5 revision history table 10: document revision history date revision changes 03 - oct - 2012 1 first r elease. 29 - jan - 2014 2 updated features in cover page. updated table 4: static characteristics, table 5: dynamic characteristics and table 7: diode switching characteristics (inductive load). minor text changes. 24 - mar - 2014 3 updated title and descripti on in cover page. updated table 4: static characteristics, table 5: dynamic characteristics and table 7: diode switching characteristics (inductive load). added section 2.1: electrical characteristics (curves). 31 - mar - 2015 4 added device in to - 247 long l eads. updated 4: package information. updated figure 7, figure 11, figure 14, figure 15, figure 20, figure 21 and added figure 26. minor text changes. 28 - jun - 2016 5 modified: table 2: "absolute maximum ratings" , section 2: "electrical characteristics" , table 6: "igbt switching characteristics (inductive load)" minor text changes.
STGW40H120DF2, stgwa40h120df2 docid023753 rev 5 17 / 17 important notice C please read carefully stmicroelectronics nv and its subsidiaries (st) reserve the right to make changes, corrections, enhancements, modifications , and improvements to st products and/or to this document at any time without notice . purchasers should obtain the latest relevant information on st products before placing orders. st products are sold pursuant to sts terms and conditions of sale in place at the time of or der acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products wi th provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information i n this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2016 stmicroelectronics C all rights reserved

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